switches - chip 4 4 - 20 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com parameter frequency min. typ. max. units insertion loss dc - 6.0 ghz dc - 8.0 ghz 1.8 1.9 2.1 2.2 db db isolation dc - 2.0 ghz dc - 4.0 ghz dc - 6.0 ghz dc - 8.0 ghz 44 37 34 30 49 42 39 35 db db db db return loss on state dc - 2.0 ghz dc - 8.0 ghz 10 7 14 10 db db return loss off state dc - 8.0 ghz 7 10 db input power for 1 db compression 0.5 - 8.0 ghz 17 21 dbm input third order intercept (two-tone input power= +7 dbm each tone) 0.5 - 8.0 ghz 37 40 dbm switching characteristics trise, tfall (10/90% rf) ton, toff (50% ctl to 10/90% rf) dc - 8.0 ghz 35 150 ns ns HMC344 general description features functional diagram the HMC344 is a broadband non-re ective gaas mesfet sp4t switch chip. covering dc to 8 ghz, this switch offers high isolation, low insertion loss, and a compact form factor. this switch also includes an on board binary decoder circuit which reduces the number of required logic control lines to two. the switch operates using a negative control voltage of 0/-5v, and requires a xed bias of -5v. all data is tested with the chip in a 50 ohm test xture connected via 0.0 25 mm (1 mil) diameter wire b ond s of minimal length 0.31 mm (12 mils). this sp4t switch is also available in smt packaged form as the HMC344lc3. broadband performance: dc - 8 ghz non-re ective topology low insertion loss: 1.8 db @ 6 ghz integrated 2:4 ttl decoder small size: 1.08 x 1.05 x 0.10 mm electrical speci cations, t a = +25 c, with 0/-5v control, vee= -5v, 50 ohm system typical applications the HMC344 is ideal for: ? telecom infrastructure ? microwave radio & vsat ? military & space ? test instrumentation gaas mmic sp4t non-reflective switch, dc - 8 ghz v06.0709
switches - chip 4 4 - 21 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input third order intercept point return loss 0.1 and 1 db input compression point insertion loss vs. temperature isolation -4 -3 -2 -1 0 1 0123456789 + 25c + 85c - 55c insertion loss (db) frequency (ghz) 15 17 19 21 23 25 23456789 1db compression point 0.1db compression point input compression point (dbm) frequency (ghz) 35 37 39 41 43 45 123456789 rf1 rf2 rf3 rf4 input third order intercept (dbm) frequency ( ghz ) -20 -15 -10 -5 0 0123456789 rfc rf1, rf2, rf3, rf4 on rf1, rf2, rf3, rf4 off return loss (db) frequency (ghz) -80 -60 -40 -20 0 0123456789 rf1 rf2 rf3 rf4 isolation (db) frequency (ghz) HMC344 v06.0709 gaas mmic sp4t non-reflective switch, dc - 8 ghz
switches - chip 4 4 - 22 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com truth table absolute maximum ratings bias voltage & current control input signal path state a b rf com to: high high rf1 low high rf2 high low rf3 low low rf4 vee range = -5 vdc 10% vee (v) idd (typ) (ma) idd (max) (ma) -5 3 6 bias voltage range (vee) -7v control voltage range (a & b) vee -0.5v to +1v channel temperature 150 c thermal resistance (insertion loss path) 143 c/ w thermal resistance (terminated path) 1,030 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c maximum input power +24 dbm esd sensitivity (hbm) class 1a ttl/cmos control voltages state bias condition low -3v to 0 vdc @ 60 ua typ. high -5 to 4.2 vdc @ 5 ua typ. electrostatic sensitive device observe handling precautions HMC344 v06.0709 gaas mmic sp4t non-reflective switch, dc - 8 ghz
switches - chip 4 4 - 23 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing notes: 1. dimensions in inches [millimeters]. 2. die thickness is 0.004. 3. typical bond pad is 0.004 square. 4. typical bond pad spacing is 0.006 center to center. 5. bond pad metallization: gold. 6. backside metallization: gold. 7. backside metal is ground. 8. no connection required for unlabeled bond pads. die packaging information [1] standard alternate wp-2 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC344 v06.0709 gaas mmic sp4t non-reflective switch, dc - 8 ghz
switches - chip 4 4 - 24 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com ttl interface circuit note: control inputs a and b can be driven directly with ttl logic with -5 volts applied to the hct logic gates vee pin and to vee (pad) of the rf switch. pad descriptions pad number function description interface schematic 1, 2, 3, 4, 5, 10 rf4, rfc, rf1, rf2, rf3 these pads are dc coupled and matched to 50 ohms. blocking capacitors are required. 6 a see truth table and control voltage table. 7 b see truth table and control voltage table. 8 vee supply voltage -5.0 vdc 10% 9, die bottom gnd die bottom and pad must be connected to rf/dc ground. HMC344 v06.0709 gaas mmic sp4t non-reflective switch, dc - 8 ghz
switches - chip 4 4 - 25 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram HMC344 v06.0709 gaas mmic sp4t non-reflective switch, dc - 8 ghz
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